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GLT41016 Datasheet(PDF) 7 Page - List of Unclassifed Manufacturers |
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GLT41016 Datasheet(HTML) 7 Page - List of Unclassifed Manufacturers |
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7 / 23 page ![]() G -LINK GLT41016 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Dec 1998 (Rev 2.1) G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation, Taiwan 2F, No.12, R&D Rd. II, Science-Based Industrial Park, Hsin Chu, Taiwan, R.O.C. - 7 - AC Characteristics TA = 0 °C to 70°C , VCC = 5 V ± 10%, VIH/VIL = 2.4/0.8 V, VOH/VOL = 2.0/0.8V An initial pause of 100 µs and 8 CAS -before-RAS or RAS -only refresh cycles are required after power-up. 30 35 40 45 Parameter Symbol Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes Read or Write Cycle Time tRC 65 70 75 80 ns Read Modify Write Cycle Time tRWC 90 95 100 103 ns RAS Precharge Time tRP 25 25 25 30 ns RAS Pulse Width tRAS 30 100k 35 100k 40 100k 45 100k ns Access Time from RAS tRAC 30 35 40 45 ns 1,2,3 Access Time from CAS tCAC 10 11 12 12 ns 1,5,10 Access Time from Column Address tAA 15 18 20 22 ns 1,5,6 CAS to Output Low-Z tCLZ 0 0 0 0 ns CAS to Output High-Z tCEZ 3 8 3 8 3 8 3 8 ns RAS Hold Time tRSH 10 12 12 13 ns RAS Hold Time Referenced to OE tROH 7 8 8 9 ns CAS Hold Time tCSH 25 30 34 40 ns CAS Pulse Width tCAS 6 10k 6 10k 6 10K 7 10K ns RAS to CAS Delay Time tRCD 13 20 17 24 18 28 18 33 ns RAS to Column Address Delay Time tRAD 10 15 12 17 13 20 13 23 ns 7 CAS to RAS Precharge Time tCRP 5 5 5 5 ns Row Address Set-Up Time tASR 0 0 0 0 ns Row Address Hold Time tRAH 6 7 8 8 ns Column Address Set-Up Time tASC 0 0 0 0 ns Column Address Hold Time tCAH 6 6 6 6 ns Column Address to RAS Lead Time tRAL 15 18 20 23 ns Column Address Hold Time Referenced to RAS tAR 26 30 34 39 ns Read Command Set-Up Time tRCS 0 0 0 0 ns Read Command Hold Time Referenced to CAS tRCH 0 0 0 0 ns 4 Read Command Hold Time Referenced to RAS tRRH 0 0 0 0 ns 4 Write Command Set-Up Time tWCS 0 0 0 0 ns 8,9 Write Command Hold Time tWCH 6 6 6 6 ns Write Command Pulse Width tWP 6 6 6 6 ns |
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