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GLT44016 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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GLT44016 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
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1 / 17 page ![]() G -LINK GLT44016 256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Aug, 2000(Rev.3.1) G-Link Technology Corporation 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A. G-Link Technology Corporation,Taiwan 6F, No. 24-2, Industry E. RD. IV, Science Based Industrial Park, Hsin Chu, Taiwan. - 1 - Features : Description : ∗ 262,144 words by 16 bits organization. ∗ Fast access time and cycle time. ∗ Dual CAS Input. ∗ Low power dissipation. ∗ Read-Modify-Write, RAS -Only Refresh, CAS -Before-RAS Refresh, Hidden Refresh and Test Mode Capability. ∗ 512 refresh cycles per 8ms. ∗ Available in 40-Pin 400 mil SOJ and 40/44 Pin TSOP(II) ∗ Single 5.0V ±10% Power Supply. ∗ All inputs and Outputs are TTL compatible. ∗ Extended Data-Out(EDO) Page Mode operation. The GLT44016 is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The GLT44016 offers Fast Page mode with Extended Data Output, and has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. The GLT44016 has symmetric address and accepts 512-cycle refresh in 8ms interval. All inputs are TTL compatible. EDO Page Mode operation allows random access up to 512 x 16 bits within a page, with cycle times as short as 10ns. The GLT44016 is best suited for graphics, and DSP applications requiring high performance memories. HIGH PERFORMANCE 25 28 30 35 40 50 Max. RAS Access Time, (tRAC) 25 ns 28 ns 30 ns 35 ns 40 ns 50 ns Max. Column Address Access Time, (tCAA) 13 ns 13 ns 16 ns 18 ns 20 ns 25 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 10 ns 10 ns 12 ns 13 ns 15 ns 20 ns Min. Read/Write Cycle Time, (tRC) 45 ns 45 ns 60 ns 65 ns 70 ns 85 ns Max. CAS Access Time (tCAC) 8 ns 8 ns 10 ns 11 ns 12 ns 14 ns |
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