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IRHM4150 Datasheet(PDF) 1 Page - International Rectifier

Part # IRHM4150
Description  RADIATION HARDENED POWER MOSFET THRU-HOLE
PDF  12 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRHM4150 Datasheet(HTML) 1 Page - International Rectifier

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Absolute Maximum Ratings
Absolute Maximum Ratings
Absolute Maximum Ratings
Absolute Maximum Ratings
Absolute Maximum Ratings
Parameter
Parameter
Parameter
Parameter
Parameter
Units
Units
Units
Units
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
34
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
21
IDM
Pulsed Drain Current ➀
136
PD @ TC = 25°C
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
500
mJ
IAR
Avalanche Current ➀
34
A
EAR
Repetitive Avalanche Energy ➀
15
mJ
dv/dt
Peak Diode Recovery dv/dt ➂
5.5
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
9.3 (Typical)
g
PD - 90675C
Pre-Irradiation
Pre-Irradiation
Pre-Irradiation
Pre-Irradiation
Pre-Irradiation
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
oC
A
RADIATION HARDENED
RADIATION HARDENED
RADIATION HARDENED
RADIATION HARDENED
RADIATION HARDENED
POWER MOSFET
POWER MOSFET
POWER MOSFET
POWER MOSFET
POWER MOSFET
THRU-HOLE (TO-254AA)
THRU-HOLE (TO-254AA)
THRU-HOLE (TO-254AA)
THRU-HOLE (TO-254AA)
THRU-HOLE (TO-254AA)
8/14/01
www.irf.com
1
IRHM7150
IRHM7150
IRHM7150
IRHM7150
IRHM7150
JANSR2N7268
JANSR2N7268
JANSR2N7268
JANSR2N7268
JANSR2N7268
100V, N-CHANNEL
100V, N-CHANNEL
100V, N-CHANNEL
100V, N-CHANNEL
100V, N-CHANNEL
REF: MIL-PRF-19500/603
REF: MIL-PRF-19500/603
REF: MIL-PRF-19500/603
REF: MIL-PRF-19500/603
REF: MIL-PRF-19500/603
RAD Hard
RAD Hard
RAD Hard
RAD Hard
RAD Hard
™ HEXFET
HEXFET
HEXFET
HEXFET
HEXFET
® TECHNOLOGY
TECHNOLOGY
TECHNOLOGY
TECHNOLOGY
TECHNOLOGY
Product Summary
Product Summary
Product Summary
Product Summary
Product Summary
Part Number Radiation Level
Part Number Radiation Level
Part Number Radiation Level
Part Number Radiation Level
Part Number Radiation Level R
R
R
R
RDS(on)
DS(on)
DS(on)
DS(on)
DS(on)
IIIIIDDDDD
QPL Part Number
QPL Part Number
QPL Part Number
QPL Part Number
QPL Part Number
IRHM7150
100K Rads (Si)
0.065Ω
34A
JANSR2N7268
IRHM3150
300K Rads (Si)
0.065Ω
34A
JANSF2N7268
IRHM4150
600K Rads (Si)
0.065Ω
34A
JANSG2N7268
IRHM8150
1000K Rads (Si) 0.065Ω
34A
JANSH2N7268
Features:
Features:
Features:
Features:
Features:
!
Single Event Effect (SEE) Hardened
!
Low RDS(on)
!
Low Total Gate Charge
!
Proton Tolerant
!
Simple Drive Requirements
!
Ease of Paralleling
!
Hermetically Sealed
!
Ceramic Eyelets
!
Light Weight
For footnotes refer to the last page
TO-254AA
TO-254AA
TO-254AA
TO-254AA
TO-254AA


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