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IRLR8203 Datasheet(PDF) 2 Page - International Rectifier |
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IRLR8203 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRLR/U8203 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.75 1.3 V TJ = 25°C, IS = 12A, VGS = 0V ––– 0.65 ––– TJ = 125°C, IS = 12A, VGS = 0V trr Reverse Recovery Time ––– 48 72 ns TJ = 25°C, IF = 12A, VR=15V Qrr Reverse Recovery Charge ––– 62 92 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 49 74 ns TJ = 125°C, IF = 12A, VR=15V Qrr Reverse Recovery Charge ––– 67 100 nC di/dt = 100A/µs Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 310 mJ IAR Avalanche Current ––– 30 A Avalanche Characteristics S D G Diode Characteristics 110 120 A Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 35 ––– ––– SVDS = 15V, ID = 12A Qg Total Gate Charge ––– 33 50 ID = 12A Qgs Gate-to-Source Charge ––– 5.7 8.5 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– 17 25 VGS = 4.5V Qoss Output Gate Charge ––– 23 34 VGS = 0V, VDS = 10V td(on) Turn-On Delay Time ––– 15 ––– VDD = 15V tr Rise Time ––– 99 ––– ID = 12A td(off) Turn-Off Delay Time ––– 30 ––– RG = 6.8Ω tf Fall Time ––– 69 ––– VGS = 4.5V Ciss Input Capacitance ––– 2430 ––– VGS = 0V Coss Output Capacitance ––– 1200 ––– VDS = 15V Crss Reverse Transfer Capacitance ––– 250 ––– pF ƒ = 1.0MHz VSD Diode Forward Voltage Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.027 ––– V/°C Reference to 25°C, ID = 1mA ––– 5.6 6.8 VGS = 10V, ID = 15A ––– 7.1 9.0 VGS = 4.5V, ID = 12A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 24V, VGS = 0V ––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω |
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