IXDN55N120 datasheet(1/4 Pages) IXYS

Part #	IXDN55N120

Description	High Voltage IGBT with optional Diode

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Conditions

Maximum Ratings

V

CES

T

J = 25°C to 150°C

1200

V

CGR

T

J = 25°C to 150°C; RGE = 20 k

W

1200

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C

100

A

I

C90

T

C = 90°C

62

A

I

CM

T

C = 90°C, tp = 1 ms

124

A

RBSOA

V

GE = ±15 V, TJ = 125°C, RG = 22

W

I

CM = 100

A

Clamped inductive load, L = 30 µH

V

CEK < VCES

t

SC

V

GE = ±15 V, VCE = VCES, TJ = 125°C

10

µs

(SCSOA)

R

G = 22

W, non repetitive

P

C

T

C = 25°C

IGBT

450

W

Diode

220

W

V

ISOL

50/60 Hz; I

ISOL

£ 1 mA

2500

V~

T

J

-40 ... +150

°C

T

stg

-40 ... +150

°C

M

d

Mounting torque

1.5/13 Nm/lb.in.

Terminal connection torque (M4)

1.5/13 Nm/lb.in.

Weight

30

g

V

CES

= 1200 V

I

C25

= 100 A

V

CE(sat) typ = 2.3 V

Features

q

NPT IGBT technology

q

low saturation voltage

q

low switching losses

q

square RBSOA, no latch up

q

high short circuit capability

q

positive temperature coefficient for

easy paralleling

q

MOS input, voltage controlled

q

optional ultra fast diode

q

International standard package

miniBLOC

Advantages

q

Space savings

q

Easy to mount with 2 screws

q

High power density

Typical Applications

q

AC motor speed control

q

DC servo and robot drives

q

DC choppers

q

Uninteruptible power supplies (UPS)

q

Switch-mode and resonant-mode

power supplies

High Voltage IGBT

with optional Diode

Short Circuit SOA Capability

Square RBSOA

IXDN 55N120

IXDN 55N120 D1

Symbol

Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

(BR)CES

V

GE = 0 V

1200

V

GE(th)

I

C = 2 mA, VCE = VGE

4.5

6.5

V

I

CES

V

CE = VCES

T

J = 25°C

3.8 mA

T

J = 125°C

6

mA

I

GES

V

CE = 0 V, VGE = ± 20 V

± 500

nA

V

CE(sat)

I

C = 55 A, VGE = 15 V

2.3

2.8

V

IXDN 55N120

IXDN 55N120 D1

G

C

E

G

C

E

E = Emitter x,

C = Collector

G = Gate,

E = Emitter x

x Either Emitter terminal can be used as

Main or Kelvin Emitter

miniBLOC, SOT-227 B

E153432

G

E

C

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IXDN55N120 Datasheet(PDF) 1 Page - IXYS Corporation

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