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ADG901 Datasheet(PDF) 2 Page - Analog Devices |
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ADG901 Datasheet(HTML) 2 Page - Analog Devices |
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2 / 12 page  REV. A –2– ADG901/ADG902–SPECIFICATIONS1 B Version Parameter Symbol Conditions Min Typ 2 Max Unit AC ELECTRICAL CHARACTERISTICS Operating Frequency 3 DC 2.5 GHz –3 dB Frequency 4 4.5 GHz Input Power 4 0 V dc Bias 7 dBm +0.5 V dc Bias 16 dBm Insertion Loss S21, S12 DC to 100 MHz; VDD = 2.5 V ± 10% 0.4 0.7 dB 500 MHz; VDD = 2.5 V ± 10% 0.5 0.8 dB 1000 MHz; VDD = 2.5 V ± 10% 0.8 1.25 dB Isolation—RF1 to RF2 S21, S12 100 MHz 60 61 dB (CP Package) 500 MHz 43 45 dB 1000 MHz 34 40 dB Isolation—RF1 to RF2 S21, S12 100 MHz 51 60 dB (RM Package) 500 MHz 37.5 47 dB 1000 MHz 31 37 dB Return Loss (On Channel) 4 S11, S22 DC to 100 MHz 20 28 dB 500 MHz 23 29 dB 1000 MHz 25 28 dB Return Loss (Off Channel) 4 S11, S22 DC to 100 MHz 18 23 dB 500 MHz 17 21 dB 1000 MHz 15 19 dB On Switching Time 4 tON 50% CTRL to 90% RF 3.6 6 ns Off Switching Time 4 tOFF 50% CTRL to 10% RF 5.8 9.5 ns Rise Time 4 tRISE 10% to 90% RF 3.1 5.5 ns Fall Time 4 tFALL 90% to 10% RF 6.0 8.5 ns 1 dB Compression 4 P–1 dB 1000 MHz 17 dBm Third Order Intermodulation Intercept IP3 900 MHz/901 MHz, 4 dBm 30 36 dBm Video Feedthrough 5 2.5 mV p-p DC ELECTRICAL CHARACTERISTICS Input High Voltage VINH VDD = 2.25 V to 2.75 V 1.7 V VINH VDD = 1.65 V to 1.95 V 0.65 VCC V Input Low Voltage VINL VDD = 2.25 V to 2.75 V 0.7 V VINL VDD = 1.65 V to 1.95 V 0.35 VCC V Input Leakage Current II 0 ≤ V IN ≤ 2.75 V ±0.1 ±1 µA CAPACITANCE 4 RF1/RF2, RF Port On Capacitance CRF ON f = 1 MHz 1.2 pF CTRL Input Capacitance CCTRL f = 1 MHz 2.1 pF POWER REQUIREMENTS VDD 1.65 2.75 V Quiescent Power Supply Current IDD Digital inputs = 0 V or VDD 0.1 1 µA NOTES 1Temperature range B Version: –40 °C to +85°C. 2Typical values are at V DD = 2.5 V and 25 °C, unless otherwise stated. 3Point at which insertion loss degrades by 1 dB. 4Guaranteed by design, not subject to production test. 5The dc transience at the output of any port of the switch when the control voltage is switched from high to low or low to high in a 50 Ω test setup, measured with 1 ns rise time pulses and 500 MHz bandwidth. Specifications subject to change without notice. (VDD = 1.65 V to 2.75 V, GND = 0 V, input power = 0 dBm, all specifications TMIN to TMAX, unless otherwise noted.) |
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