BLF1049 datasheet(5/12 Pages) PHILIPS

5 / 12 page

2003 May 14

Philips Semiconductors

Product speciﬁcation

Base station LDMOS transistor

BLF1049

handbook, halfpage

100

150

−20

−30

−50

−60

−40

MLE065

(3)

(2)

(1)

PL (PEP) (W)

(dBc)

Fig.6

Third order intermodulation distortion as a

function of load power at different

temperatures.

(1) Th = −40 °C.

(2) Th =20 °C.

(3) Th =80 °C.

VDS = 27 V; IDQ = 1.1 A; f1 = 920.0 MHz; f2 = 920.1 MHz.

handbook, halfpage

100

150

−30

−40

−60

−70

−50

MLE066

(1)

(3)

(2)

PL (PEP) (W)

(dBc)

Fig.7

Fifth order intermodulation distortion as a

function of load power at different

temperatures.

(1) Th = −40 °C.

(2) Th =20 °C.

(3) Th =80 °C.

VDS =27V; IDQ = 1.1 A; f1 = 920.0 MHz; f2 = 920.1 MHz.

handbook, halfpage

−40

−50

−60

−70

100

150

MLE067

(1)

(2)

(3)

PL (PEP) (W)

(dBc)

Fig.8

Seventh order intermodulation distortion as

a function of load power at different

temperatures.

(1) Th = −40 °C.

(2) Th =20 °C.

(3) Th =80 °C.

VDS = 27 V; IDQ = 1.1 A; f1 = 920.0 MHz;

handbook, halfpage

100

150

MLE068

gain

(dB)

PL (PEP) (W)

(%)

(2)

(3)

(4)

(1)

Fig.9

Power gain and drain efficiency as functions

of peak envelope load power;

typical values.

VDS = 27 V; f1 = 920.0 MHz; f2 = 920.1 MHz.

(1) IDQ =1A.

(2) IDQ = 1.45 A.

(3) IDQ =1A.

(4) IDQ = 1.45 A.

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