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BLF1049 Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BLF1049
Description  Base station LDMOS transistor
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLF1049 Datasheet(HTML) 3 Page - NXP Semiconductors

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2003 May 14
3
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
THERMAL CHARACTERISTICS
Notes
1. Thermal resistance is determined under RF operating conditions.
2. Depending on mounting condition in application.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit; VDS =27V; Th =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-c
thermal resistance from junction to case
Th =25 °C, PL = 35 W (AV), note 1
0.42
K/W
Rth j-h
thermal resistance from junction to heatsink
Th =25 °C, PL = 35 W (AV), note 2
0.62
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 3 mA
75
−−
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID = 300 mA
4
−
5V
IDSS
drain-source leakage current
VGS = 0; VDS =36V
−−
3
µA
IDSX
on-state drain current
VGS =VGSth +9V; VDS =10V
45
−−
A
IGSS
gate leakage current
VGS = ±20 V; VDS =0
−−
1
µA
gfs
forward transconductance
VDS = 10 V; ID =10A
−
9
−
S
RDSon
drain-source on-state resistance
VGS =9V; ID =10A
−
60
−
m
Ω
Mode of operation: 2-tone CW, 100 kHz spacing; IDQ = 1130 mA; f = 890 MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
gain power
PL = 125 W (PEP)
14.6
15.5
−
dB
η
D
drain efficiency
33
37
−
%
IRL
input return loss
−−12
−6dB
d3
third order inter modulation
distortion
−−32
−25
dBc
Mode of operation: GSM EDGE; IDQ = 750 mA; f = 920 MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
gain power
PL =45W(AV)
−
15
−
dB
η
D
drain efficiency
−
32
−
%
ACPR 400
adjacent channel power ratio
−−64
−
dBc
EVM (AV)
EVM rms average signal distortion
−
2
−
%
EVM peak
EVM rms peak signal distortion
−
2.2
−
%
Mode of operation: 1-tone CW; IDQ = 1000 mA; f = 920 MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
gain power
PL =PL 1 dB = 125 W
−
16.5
−
dB
ηD
drain efficiency
−
54
−
%



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