IRFZ46NSTRL datasheet(2/10 Pages) IRF

2 / 10 page

IRFZ46NS/IRFZ46NL

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Starting TJ = 25°C, L = 389µH

RG = 25Ω, IAS = 28A. (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Notes:

** When mounted on 1" square PCB (FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

ISD ≤ 28A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Uses IRFZ46N data and test conditions.

This is a typical value at device destruction and represents

operation outside rated limits.

This is a calculated value limited to TJ = 175°C.

Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 39A.

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

1.3

TJ = 25°C, IS = 28A, VGS = 0V

trr

Reverse Recovery Time

101

TJ = 25°C, IF = 28A

Qrr

Reverse Recovery Charge

208 312

di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.057

V/°C Reference to 25°C, ID =1mA

RDS(on)

Static Drain-to-Source On-Resistance

.0165

Ω

VGS =10V, ID = 28A

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

VDS = 25V, ID = 28A

µA

VDS = 55V, VGS = 0V

250

VDS = 44V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage

100

VGS = 20V

Gate-to-Source Reverse Leakage

-100

VGS = -20V

Total Gate Charge

ID = 28A

Qgs

Gate-to-Source Charge

VDS = 44V

Qgd

Gate-to-Drain ("Miller") Charge

VGS = 10V, See Fig. 6 and 13

td(on)

Turn-On Delay Time

VDD = 28V

Rise Time

ID = 28A

td(off)

Turn-Off Delay Time

RG = 12Ω

Fall Time

RD = 0.98Ω, See Fig. 10

Between lead,

and center of die contact

Ciss

Input Capacitance

1696

VGS = 0V

Coss

Output Capacitance

407

VDS = 25V

Crss

Reverse Transfer Capacitance

110

= 1.0MHz, See Fig. 5

EAS

Single Pulse Avalanche Energy

583

152

IAS = 28A, L = 389mH

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

IDSS

Drain-to-Source Leakage Current

7.5

Internal Source Inductance

180

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