www.onsemi.com

Semiconductor Components Industries, LLC, 2017

Publication Order Number:

Apr, 2017, Rev. 1.0

FDMD8630

1

Power 5 x 6

G1

D1

D1

D1

S1,S2 to backside

D2

D2

D2

G2

1

2

3

4

8

7

6

5

Top

Bottom

Pin 1

G1

D1

D1

D1

D2

D2

D2

G2

S1 / S2

Pin 1

FDMD8630

30 V, 167 A, 1.0 m

Ω

Features

Common Source Configuration to Eliminate PCB Routing

Large Source Pad on Bottom of Package for Enhanced

Thermals

Ideal for Flexible Layout in Secondary Side Synchronous

Rectification

100% UIL Tested

Termination is Lead-free and RoHS Compliant

General Description

This package integrates two N-Channel devices connected

internally in common-source configuration. This enables very

low package parasitics and optimized thermal path to the

common source pad on the bottom. Provides a very small

footprint (5 x 6 mm) for higher power density.

Applications

Isolated DC-DC Synchronous Rectifiers

Common Ground Load Switches

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

30

V

Gate to Source Voltage

±20

V

Drain Current

-Continuous

(Note 5)

167

A

-Continuous

(Note 5)

106

Drain Current

-Continuous

(Note 1a)

38

-Pulsed

(Note 4)

1178

Single Pulse Avalanche Energy

(Note 3)

726

mJ

Power Dissipation

43

W

Power Dissipation

(Note 1a)

2.3

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

2.9

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

55

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMD8630

FDMD8630

Power 5 x 6

13 ’’

12 mm

3000 units