www.onsemi.com

Semiconductor Components Industries, LLC, 2016

Publication Order Number:

November, 2016, Rev. 1.0

FDMS86183/D

1

FDMS86183

N-Channel

100 V, 51 A, 12.8 m

Ω

Features

Shielded Gate MOSFET Technology

50% Lower Qrr than Other MOSFET Suppliers

Lowers Switching Noise/EMI

MSL1 Robust Package Design

100% UIL Tested

RoHS Compliant

General Description

This N-Channel MV MOSFET is produced using Fairchild

Semiconductor’s

advanced

process

that

incorporates Shielded Gate technology. This process has been

optimized to minimize on-state resistance and yet maintain

superior switching performance with best in class soft body

diode.

Applications

Primary DC-DC MOSFET

Synchronous Rectifier in DC-DC and AC-DC

Motor Drive

Solar

Power 56

D

D

D

D

G

S

S

S

Pin 1

Bottom

Top

D

D

D

D

S

S

S

G

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

100

V

Gate to Source Voltage

±20

V

Drain Current -Continuous

(Note 5)

51

A

-Continuous

(Note 5)

32

-Continuous

(Note 1a)

10

-Pulsed

(Note 4)

187

Single Pulse Avalanche Energy

(Note 3)

96

mJ

Power Dissipation

63

W

Power Dissipation

(Note 1a)

2.5

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

2.0

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

50

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMS86183

FDMS86183

Power 56

13 ’’

12 mm

3000 units