LM2706TL datasheet(4/15 Pages) NSC

4 / 15 page

Electrical Characteristics (Continued)

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is

functional, but device specifications may not be guaranteed. For guaranteed specifications and associated test conditions, see the Min and Max limits and Conditions

in the Electrical Characteristics table. Electrical characteristics table limits are guaranteed by production testing, design or correlation using standard Statistical

Quality Control methods. Typical (typ) specifications are mean or average values at 25˚C and are not guaranteed.

Note 2: Thermal shutdown will occur if the junction temperature exceeds 150˚C.

Note 3: Thermal resistance specified with 1.2" x 1.2" (2 layer 1.5 oz. Cu.) board.

Note 4: The LM2706 is designed for mobile phone applications where turn-on after power-up is controlled by the system controller and where requirements for a

small package size overrule increased die size for internal Under Voltage Lock-Out (UVLO) circuitry. Thus, it should be kept in shutdown by holding the EN pin low

until the input voltage exceeds 2.7V.

Note 5: Over-Voltage protection (OVP) hysteresis is the voltage above the nominal VOUT where the OVP comparator turns off the PFET switch while in PWM mode.

Note 6: VIN is compared to the programmed output voltage (VOUT, PROG). When VIN–VOUT, PROG falls below VBYPASS− for longer than TBYPASS the bypass FET

turns on and the switching FETS turn off. This is called the bypass mode. Bypass mode is exited when VIN–VOUT, PROG exceeds VBYPASS+ for longer than

TBYPASS, and PWM mode returns.

Note 7: Shutdown current includes the leakage currents of the PFET and Bypass FET.

Note 8: Current limit is built-in, fixed, and not adjustable. The current limit tests are done by using DC measurement methods.

System Characteristics The following specifications are based on design limits and assume that the compo-

nent values in the typical application circuit are used.These parameters are not guaranteed by production testing.

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Tresponse

Time for V

OUT to rise from 1.5V to

3.25V (PWM Mode)

IN = 4.2V,COUT = 4.7 µF,

LOAD =15

Ω

µs

Ton_pwm

Turn on time in pwm mode

EN=LtoH,

IN=3.6V,VOUT=3.25V,

OUT = 4.7 µF, RLOAD=10

Ω

600

900

µs

CON

CON input capacitance

CON=1V, Test freq = 100kHz

T_bypass

Auto bypass detect delay

(Note 6)

µs

Ton_bypass Bypass FET turn on time

IN -VOUT = 0.25V

OUT = 4.7µF, RLOAD =15

Ω

µs

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