If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage

16V

Storage Temperature

−65˚C to +150˚C

Input Voltage

−0.3V to V

Power Dissipation (Note 3)

Internally limited

ESD Susceptibility(Note 4)

2000V

ESD Susceptibility (Note 5)

200V

Junction Temperature

150˚C

Thermal Resistance

θ

2˚C/W

θ

40˚C/W

Operating Ratings

Temperature Range

T

MIN

≤ T

A

≤ T

MAX

−40˚C

≤ T

A

≤ 85˚C

Supply Voltage (Note 10)

9.0V

≤ V

DD

≤ 14V

Electrical Characteristics for the LM4680 (Note 1)

The following specifications apply for the circuit shown in Figure 1 operating with V

Ω, and f

unless otherwise specified. Limits apply for T

Symbol

Parameter

Conditions

LM4680

Units

(Limits)

Typical

Limit

(Note 6)

(Notes 7,

8)

I

DD

Quiescent Power Supply Current

V

Ω

28

52

mA

I

SD

Shutdown Current

V

0.1

mA

A

V

Amplifier Gain

BTL output voltage with respect to input

voltage

30

dB

P

O

Output Power

THD+N = 1% (max)

THD+N = 10%, V

6

10

5

W

THD+N

Total Harmonic Distortion + Noise

P

0.2

%

f

BW

Frequency Response Bandwidth

P

-3dB relative to 1kHz

20

20000

Hz

Hz

η

Efficiency

P

81

%

éN

Output Noise

A-Weighted Filter, V

Input Referred

10

µV

SNR

Signal-to-Noise Ratio

A-Weighted Filter, P

Input Referred

116

dB

PSRR

Power Supply Rejection Ratio

V

Input Referred

f = 50Hz

f = 60Hz

f = 100Hz

f = 120Hz

f = 1kHz

99

101

102

102

104

dB

t

WU

Wake-Up time

C

600

ms

T

SD

Thermal Shutdown Temperature

170

˚C

˚C

V

SDIH

Shutdown Voltage Input High

4

V (min)

V

SDIL

Shutdown Voltage Input Low

1.5

V (max)

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