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LM4680 Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LM4680 Datasheet(HTML) 4 Page - National Semiconductor (TI) |
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4 / 11 page ![]() Note 1: All voltages are measured with respect to the GND pin unless otherwise specified. Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance. Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature TA. The maximum allowable power dissipation is PDMAX =(TJMAX −TA)/θJA or the number given in Absolute Maximum Ratings, whichever is lower. For the LM4680 typical application (shown in Figure 1) with VDD = 12V, RL =8Ω stereo operation, the total power dissipation is 900mW. θJA = 40˚C/W Note 4: Human body model, 100pF discharged through a 1.5k Ω resistor. Note 5: Machine model, 220pF – 240pF discharged through all pins. Note 6: Typicals are measured at 25˚C and represent the parametric norm. Note 7: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level). Note 8: Datasheets min/max specification limits are guaranteed by design, test, or statistical analysis. Note 9: Shutdown current is measured in a normal room environment. The SHUTDOWN pin should be driven as close as possible to GND for minimum shutdown current. Note 10: Please refer to “Under Voltage Protection” on page 8 under “General Features.” Typical Performance Characteristics THD+N vs Frequency V DD = 9V, RL =8 Ω,P O =1W THD+N vs Frequency V DD = 12V, RL =8 Ω,P O =1W 20095806 20095807 THD+N vs Frequency V DD = 14V, RL =8 Ω,P O =1W THD+N vs Output Power R L =8 Ω,V DD = 9V, f = 1kHz 20095808 20095809 www.national.com 4 |
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