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SP4412 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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SP4412 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 8 page ![]() Suface Mount Package. S mHop Microelectronics C orp. a SP4412 Symbol VDS VGS IDM 75 W A PD °C 1.67 -55 to 150 ID Units Parameter 30 7 60 °C/W V V ±20 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 30V 16A 31 @ VGS=4.5V 19 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed c A Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Ambient R JA www.samhop.com.tw Apr,16,2014 1 Details are subject to change without notice. TA=25°C TA=70°C A TA=70°C W Green Product ESD Protected. 5.6 1.07 N-Channel Enhancement Mode Field Effect Transistor TSON 3.3 x 3.3 Pin 1 4 3 2 1 D D D D G S S 5 6 7 8 S Ver 1.1 c 56 EAS Single Pulse Avalanche Energy d mJ 16 TC=25°C TC=100°C A 12.5 A 4.8 °C/W Thermal Resistance, Junction-to-Case R JC |
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Similar Description - SP4412 |
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