SP8611 datasheet(2/7 Pages) SAMHOP

2 / 7 page

Symbol

Min

Typ

Max

Units

BVDSS

IGSS

±1

VGS(th)

0.5

10.5

gFS

VSD

110

406

Qgs

1338

Qgd

917

tD(ON)

2.2

tD(OFF)

5.2

Gate-Drain Charge

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=16V

ID=4A

VGS=4.5V

RGEN=6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=4.5V , ID=4A

VDS=5V , ID=4A

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

Gate Threshold Voltage

VDS=VGS , ID=1mA

VDS=16V , VGS=0V

VGS= ±8V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

ON CHARACTERISTICS

VGS=2.5V , ID=2A

12.5

14.0

18.0

m ohm

VDS=16V,ID=8A,

VGS=4.5V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=8A

0.86

1.2

SP8611

Ver 2.1

www.samhop.com.tw

Jun,14,2016

0.9

1.5

VDS=16V,ID=8A,VGS=4.5V

11.0

m ohm

VGS=4.0V , ID=4A

13.5

12.0

m ohm

VGS=3.1V , ID=4A

15.0

9.0

11.0

8.5

10.0

Notes

a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.

b.Drain current limited by maximum junction temperature.

c.Mounted on FR4 Board of 1 inch2 , 2oz.

11.5

m ohm

VGS=3.7V , ID=4A

14.0

9.5

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