IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Fig.7

Gate Charge Characteristic Curve

Fig.8 Forward Bias Safe Operating Area

Fig.9

Capacitance Curves

Fig.10 Source Current vs. Source to Drain Voltage

Fig.11 Transient Thermal Impedance

V

1

10

100

0.1

1

10

100

Gate Charge - nCoulombs

0

25

50

75

100 125 150 175 200

0

1

2

3

4

5

6

7

8

9

10

V

0.00

0.25

0.50

0.75

1.00

1.25

1.50

0

5

10

15

20

25

30

35

40

45

50

V

0

5

10

15

20

25

0

500

1000

1500

2000

2500

3000

3500

4000

4500

Time - Seconds

0.00001

0.0001

0.001

0.01

0.1

1

10

0.001

0.01

0.1

1

D=0.2

D=0.02

D=0.5

D=0.1

D=0.05

D=0.01

Single pulse

C

rss

C

oss

V

I

I

500

10µs

100µs

1ms

10ms

100ms

Limited by R

DS(on)

C

iss

T

T

f = 1 Mhz

V

IXFH21N50

IXFH24N50

IXFH26N50

IXFM21N50

IXFM24N50

IXFM26N50

IXFT24N50

IXFT26N50