IXFH26N50 datasheet(1/4 Pages) IXYS

Part #	IXFH26N50

Description	HiPerFET Power MOSFETs

PDF	4 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

21N50

21

A

24N50

24

A

26N50

26

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

21N50

84

A

24N50

96

A

26N50

104

A

I

AR

T

C

= 25

°C

21N50

21

A

24N50

24

A

26N50

26

A

E

AR

T

C

= 25

°C30

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,5

V/

ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

TO-204 = 18 g, TO-247 = 6 g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

D = 250 µA

500

V

GS(th)

V

DS

= V

GS, ID = 4 mA

2

4

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±100

nA

I

DSS

V

DS

= 0.8 • V

DSS

T

J =

25

°C

200

µA

V

GS = 0 V

T

J = 125°C1

mA

N-Channel Enhancement Mode

High dv/dt, Low t

rr, HDMOS

TM Family

TO-247 AD (IXFH)

TO-204 AE (IXFM)

D

G

Features

• International standard packages

• Low R

DS (on) HDMOS

TM process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

- easy to drive and to protect

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC motor control

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

• High power surface mountable package

• High power density

G = Gate,

D = Drain,

S = Source,

TAB = Drain

91525H (9/99)

(TAB)

V

DSS

I

D25

R

DS(on)

IXFH/IXFM21N50

500 V 21 A 0.25

Ω

IXFH/IXFM/IXFT24N50

500 V 24 A 0.23

Ω

IXFH/IXFT26N50

500 V 26 A 0.20

Ω

t

rr ≤

≤≤≤≤ 250 ns

HiPerFETTM

Power MOSFETs

TO-268 (D3) Case Style

(TAB)

G

S

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