2N7002 datasheet(2/5 Pages) DIODES

2 / 5 page

2N7002

Document number: DS11303 Rev. 34 - 2

2 of 5

www.diodes.com

December 2017

2N7002

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Drain-Gate Voltage RGS  1.0M

VDGR

Gate-Source Voltage

Continuous

Pulsed

VGSS

±20

±40

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +85°C

TA = +100°C

170

120

105

Continuous Drain Current (Note 7) VGS = 10V

Steady

State

TA = +25°C

TA = +85°C

TA = +100°C

210

150

135

Maximum Continuous Body Diode Forward Current (Note 7)

Pulsed

Continuous

0.5

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

800

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation

(Note 6)

370

(Note 7)

540

Thermal Resistance, Junction to Ambient

(Note 6)

RθJA

348

°C/W

(Note 7)

241

Thermal Resistance, Junction to Case

(Note 7)

RθJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS



VGS = 0V, ID = 10µA

Zero Gate Voltage Drain Current

@ TC = +25°C

@ TC = +125°C

IDSS



1.0

500

µA

VDS = 60V, VGS = 0V

Gate-Body Leakage

IGSS



±10

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.0



2.5

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

@ TJ = +25°C

@ TJ = +125°C

RDS(ON)



3.2



4.4

7.5

5.0

13.5



VGS = 5.0V, ID = 0.05A

VGS = 10V, ID = 0.5A

On-State Drain Current

ID(ON)

0.5

1.0



VGS = 10V, VDS = 7.5V

Forward Transconductance

gFS



VDS =10V, ID = 0.2A

Diode Forward Voltage

VSD



0.78

1.5

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss



VDS = 25V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



Reverse Transfer Capacitance

Crss



2.0

5.0

Gate Resistance



120



Ω

VDS = 0V, VGS = 0V,

f = 1.0MHz

Total Gate Charge (VGS = 4.5V)



223



VDS = 10V, ID = 250mA

Gate-Source Charge

Qgs





Gate-Drain Charge

Qgd



178



SWITCHING CHARACTERISTICS (Note 9)

Turn-On Delay Time

tD(ON)



2.8



VDD = 30V, ID = 0.2A,

RL = 150, VGEN = 10V,

RGEN = 25

Turn-On Rise Time



3.0



Turn-Off Delay Time

tD(OFF)



7.6



Turn-Off Fall Time



5.6



Notes:

6. Device mounted on FR-4 PCB, with minimum recommended pad layout.

Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

2N7002 Datasheet(PDF) 2 Page - Diodes Incorporated

2N7002 Datasheet(HTML) 2 Page - Diodes Incorporated

Html Pages

1 2 3 4 5

Datasheet Download

Link URL