BSS138

Document number: DS30144 Rev. 21 - 2

2 of 5

www.diodes.com

August 2017

© Diodes Incorporated

BSS138

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

50

V

50

V

Gate-Source Voltage

Continuous

20

V

Gate-Source Voltage

Non Repetitive, Pulse Width<50

s

40

V

Drain Current

Continuous

200

mA

Pulsed Drain Current (

10μs Pulse Duty Cycle = 1%)

1

A

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 6)

300

mW

Thermal Resistance, Junction to Ambient (Note 6)

417

C/W

Operating and Storage Temperature Range

-55 to +150

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

50

75



V

Zero Gate Voltage Drain Current





0.5

µA

Gate-Body Leakage





100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.5

1.2

1.5

V

Static Drain-Source On-Resistance



1.4

3.5



Forward Transconductance

100





mS

DYNAMIC CHARACTERISTICS

Input Capacitance





50

pF

Output Capacitance





25

pF

Reverse Transfer Capacitance





8.0

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time





20

ns

Turn-Off Delay Time





20

ns

Notes:

6. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on

Diodes Incorporated’s suggested pad layout, which can be found on our

website at http://www.diodes.com/package-outlines.html.

7. Short duration pulse test used to minimize self-heating effect.

0

0.1

0.2

0.3

0.4

0.5

0.6

0

10

9

1

2

3

4

5

6

7

8

V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Drain-Source Current vs. Drain-Source Voltage

DS

T = 25 C

j

°

V

= 3.5V

GS

V

= 3.25V

GS

V

= 3.0V

GS

V

= 2.75V

GS

V

= 2.5V

GS

0

V

, GATE-SOURCE VOLTAGE (V)

Fig. 2 Transfer Characteristics

GS

0.1

0.2

0.3

0.5

0.4

0.6

0.7

0.8

0

1

1.5

0.5

2

3.5

4

4.5

2.5

3

-55 C

°

150 C

°

25 C

°

V

= 1V

DS