BSS138

Document number: DS30144 Rev. 21 - 2

3 of 5

www.diodes.com

August 2017

© Diodes Incorporated

BSS138

0.65

T , JUNCTION TEMPERATURE (癈 )

Fig. 3 Drain-Source On-Resistance vs. Junction Temperature

j

0.85

1.05

1.25

1.65

1.45

1.85

2.05

2.25

2.45

-55

-5

45

95

145

V

= 10V

GS

V

= 4.5V

GS

I = 0.5A

D

I = 0.075A

D

T , JUNCTION TEMPERATURE (癈 )

Fig. 4 Gate Threshold Variation vs. Ambient Temperature

j

0

0.4

0.8

1.2

1.6

2.0

2.4

-50

-25

0

25

50

75

100

125

150

I = 1mA

D

I = 250礎

D

0

I , DRAIN-CURRENT (A)

Fig. 5 Drain-Source On-Resistance vs. Drain-Current

D

1

2

3

4

5

6

7

8

0

0.02 0.04

0.06 0.08

0.16

0.14

0.12

0.1

150 C

°

25 C

°

V

= 2.5V

GS

-55 C

°

0

I , DRAIN-CURRENT (A)

Fig. 6 Drain-Source On-Resistance vs. Drain-Current

D

1

2

3

5

4

6

7

8

9

0

0.05

0.1

0.2

0.15

0.25

150 C

°

-55 C

°

25 C

°

V

= 2.75V

GS

0

1

2

3

4

5

6

0

0.1

0.2

0.3

0.4

0.5

I , DRAIN-CURRENT (A)

Fig. 7 Drain-Source On-Resistance vs. Drain-Current

D

150 C

°

-55 C

°

25 C

°

V

= 4.5V

GS

0

0.5

1

1.5

2

2.5

3

3.5

0

0.1

0.2

0.3

0.4

0.5

I , DRAIN-CURRENT (A)

Fig. 8 Drain-Source On Resistance vs. Drain-Current

D

150 C

°

-55 C

°

25 C

°

V

= 10V

GS

Junction Temperature