TSM650N15CS datasheet(2/6 Pages) TSC

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TSM650N15CS

Taiwan Semiconductor

Version: B1607

ELECTRICAL SPECIFICATIONS (T

A = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

BVDSS

150

Gate Threshold Voltage

VGS = VDS, ID = 250µA

VGS(TH)

2.7

Gate-Source Leakage Current

VGS = ±20V, VDS = 0V

IGSS

±100

Drain-Source Leakage Current

VGS = 0V, VDS = 150V

IDSS

µA

VGS = 0V, VDS = 150V

TJ = 125°C

100

Drain-Source On-State Resistance

(Note 3)

VGS = 10V, ID = 4A

RDS(on)

VGS = 6V, ID = 4A

Forward Transconductance

(Note 3)

VDS = 5V, ID = 4A

gfs

Dynamic

(Note 4)

Total Gate Charge

VGS = 10V, VDS = 75V,

ID = 4A

Total Gate Charge

VGS = 6V, VDS = 75V,

ID = 4A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Input Capacitance

VGS = 0V, VDS = 75V

f = 1.0MHz

Ciss

1783

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

f = 1.0MHz, open drain

0.4

1.3

2.6

Switching

(Note 4)

Turn-On Delay Time

VGS = 10V, VDS = 75V,

ID = 4A, RG = 2Ω,

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Source-Drain Diode

Forward Voltage

(Note 3)

VGS = 0V, IS = 4A

VSD

Reverse Recovery Time

IS = 4A ,

dI/dt = 100A/

μs

trr

Reverse Recovery Charge

Qrr

Notes:

Silicon limited current only.

L = 0.3mH, VGS = 10V, VDD = 50V, RG = 25Ω, IAS = 18A, Starting TJ = 25°C

Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.

Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM650N15CS RLG

SOP-8

2,500pcs / 13

” Reel

TSM650N15CS Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

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