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TSM650N15CS Datasheet(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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TSM650N15CS Datasheet(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
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3 / 6 page ![]() TSM650N15CS Taiwan Semiconductor 3 Version: B1607 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) ID, Drain Current (A) Qg, Gate Charge (nC) TJ, Junction Temperature (°C) VGS, Gate to Source Voltage (V) 0 0.5 1 1.5 2 2.5 -75 -50 -25 0 25 50 75 100 125 150 V GS=10V I D=4A 0 2 4 6 8 10 0 10 20 30 40 V DS=75V I D=4A 0 5 10 15 20 25 30 0 2 4 6 8 25℃ -55℃ 150℃ 0 5 10 15 20 25 30 0 2 4 6 8 V GS=10V V GS=9V V GS=8V V GS=7V V GS=6V V GS=5V 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0 5 10 15 20 25 30 V GS=6V V GS=10V 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 5 6 7 8 9 10 I D=4A |
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