TSM650N15CS datasheet(4/6 Pages) TSC

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TSM650N15CS

Taiwan Semiconductor

Version: B1607

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Capacitance vs. Drain-Source Voltage

BVDSS vs. Junction Temperature

Maximum Safe Operating Area, Junction-to-Case

Source-Drain Diode Forward Current vs. Voltage

Normalized Thermal Transient Impedance, Junction-to-Case

t, Square Wave Pulse Duration (sec)

VDS, Drain to Source Voltage (V)

TJ, Junction Temperature (°C)

VSD, Body Diode Forward Voltage (V)

0.8

0.9

1.1

1.2

-75

-50

-25

100 125 150

D=1mA

500

1000

1500

2000

2500

3000

120

150

CISS

COSS

CRSS

0.1

100

0.2

0.4

0.6

0.8

1.2

25℃

150℃

-55℃

VDS, Drain to Source Voltage (V)

0.01

0.1

100

1000

DS(ON)

SINGLE PULSE

RӨJC=10°C/W

TC=25°C

0.01

0.1

0.0001

0.001

0.01

0.1

SINGLE PULSE

RӨJC=10°C/W

Duty=0.5

Duty=0.2

Duty=0.1

Duty=0.05

Duty=0.02

Duty=0.01

Single

Notes:

Duty = t

1 / t2

J = TC + PDM x Z

ӨJC x RӨJC

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