SPEC-3116 (REV. 9)

2/11

29-09-2017

SA2002H

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Min

Typ

Max

Unit

Condition

General

Supply Voltage:

Positive

2.25

2.5

2.75

V

With respect to AGND

Supply Voltage:

Negative

-2.75

-2.5

-2.25

V

With respect to AGND

Supply Current:

Positive

3

5

mA

Supply Current:

Negative

-3

-5

mA

Analog Inputs

Current Sensor Inputs

(Differential)

Input Current Range

-25

25

μA

Peak value

Offset Voltage

-4

4

mV

With R = 4.7k

 connected

to AGND

Voltage Sensor Inputs

(Asymmetrical)

Input Current Range

-25

25

μA

Peak value

Offset Voltage

-4

4

mV

With R = 4.7k

 connected

to AGND

Digital Outputs

FOUT, FMO, DIR

Output High Voltage

Output Low Voltage

V

V

Pulse Rate FOUT

1160

Hz

At rated input conditions

Pulse Width FOUT

71

143

μs

μs

Positive energy flow

Negative energy flow

On-chip Voltage Reference

Reference Voltage

1.1

1.3

V

Reference Current

45

50

55

μA

With R = 24k

 connected

Temperature Coefficient

10

70

ppm/ºC

On-chip Oscillator

Oscillator Frequency

3.15

3.57

4.00

MHz

Temperature Coefficient

70

200

ppm/ºC

During manufacturing, testing and shipment we take great care to protect our products against potential external

environmental damage such as Electrostatic Discharge (ESD). Although our products have ESD protection circuitry,

permanent damage may occur on products subjected to high-energy electrostatic discharges accumulated on the

human body and/or test equipment that can discharge without detection. Therefore, proper ESD precautions are

recommended to avoid performance degradation or loss of functionality during product handling.

ATTENTION:

Electrostatic

sensitive device.

Requires special

handling.