ACE4606TB datasheet(3/10 Pages) ACE

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ACE4606TB

30V Complementary Enhancement Mode Field Effect Transistor

VER 1.1

N-channel Electrical Characteristics TA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250uA

Zero Gate Voltage Drain Current

IDSS

VDS=24V, VGS=0V

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250uA

1.5

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

±100

Static Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=5A

VGS=4.5V, ID=5A

Forward Transconductance

gFS

VDS=5V, ID=7A

Diode Forward Voltage

VSD

IS=1A, VGS=0V

1.2

Maximum Body-Diode Continuous

Current

Switching

Total Gate Charge

VGS=10V, VDS=15V,

ID=7A

11.5

Gate-Source Charge

1.6

Gate-Drain Charge

2.8

Turn-on Delay Time

d (on)

VGS=10V , VDS=10V

ID=1A, RGS=6

Turn-on Rise Time

Turn-off Delay Time

d(off)

Turn-off Fall Time

Dynamic

Input Capacitance

Ciss

VGS=0V, VDS=15V

f=1MHz

520

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

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