ACE4606TB datasheet(4/10 Pages) ACE

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ACE4606TB

30V Complementary Enhancement Mode Field Effect Transistor

VER 1.1

P-channel Electrical Characteristics TA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-30

Zero Gate Voltage Drain Current

IDSS

VDS=-24V, VGS=0V

-1

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=-250uA

-1

-1.5

-3

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

±100

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-4A

VGS=-4.5V, ID=-3A

Forward Transconductance

gFS

VDS=-5V, ID=-4A

Diode Forward Voltage

VSD

IS=-1A, VGS=0V

-1.1

Maximum Body-Diode Continuous

Current

-4

Switching

Total Gate Charge

VGS=-10V, VDS=-15V,

ID=-4A

11.5

Gate-Source Charge

2.5

Gate-Drain Charge

2.2

Turn-on Delay Time

d (on)

VGS=-10V , VDS=-15V

ID=1A, RGS=6

Turn-on Rise Time

Turn-off Delay Time

d(off)

Turn-off Fall Time

Dynamic

Input Capacitance

Ciss

VGS=0V, VDS=-15V

f=1MHz

726

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

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