ACE4606TB datasheet(1/10 Pages) ACE

Part #	ACE4606TB

Description	30V Complementary Enhancement Mode Field Effect Transistor

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE4606TB

30V Complementary Enhancement Mode Field Effect Transistor

VER 1.1

1

Description

The ACE4606TB uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low

gate charge. The complementary MOSFETs may be used in inverter and other applications.

Features

N-channel



VDS=30V



ID=7A



RDS(ON)

< 26mΩ (V

GS=10V)



RDS(ON)

< 45mΩ (V

GS=4.5V)

P-channel



VDS=-30V



ID=-4A



RDS(ON) < 58

mΩ (V

GS=-10V)



RDS(ON) < 80

mΩ (V

GS=-4.5V)

Absolute Maximum Ratings

Parameter

Symbol

N-channel

P-channel

Unit

Drain-Source Voltage

VDSS

30

-30

V

Gate-Source Voltage

VGSS

±20

V

Drain

Current (Continuous)*AC

TA=25°C

ID

7

-4

A

TA=70°C

6

-3

Drain Current (Pulse) *B

IDM

28

-16

Power Dissipation

TA=25°C

PD

2

W

TA=70°C

0.8

Operating Temperature/ Storage Temperature

TJ,TSTG

-55 to 150

OC

A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The value in any given application depends on the user's specific board

design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is

based on the t≤ 10s junction to ambient thermal resistance rating.

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ACE4606TB Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

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