PMGD280UN datasheet(5/12 Pages) PHILIPS

5 / 12 page

Philips Semiconductors

PMGD280UN

Dual N-channel

µTrenchMOS™ ultra low level FET

Product data

Rev. 01 — 10 February 2004

5 of 12

9397 750 12763

Characteristics

Table 5:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID =1 µA; VGS =0V

Tj =25 °C

--V

Tj = −55 °C

--V

VGS(th)

gate-source threshold voltage

ID = 0.25 mA; VDS =VGS; Figure 9

Tj =25 °C

0.45

0.7

Tj = 150 °C

0.25

Tj = −55 °C

1.2

IDSS

drain-source leakage current

VDS =20V; VGS =0V

Tj =25 °C

--1

µA

Tj = 150 °C

100

µA

IGSS

gate-source leakage current

VGS = ±8 V; VDS = 0 V

100

RDSon

drain-source on-state resistance

VGS = 4.5 V; ID = 0.2 A; Figure 7 and 8

Tj =25 °C

280

340

Ω

Tj = 150 °C

448

544

Ω

VGS = 2.5 V; ID = 0.1 A; Figure 7 and 8

360

430

Ω

VGS = 1.8 V; ID = 0.075 A; Figure 7 and 8

460

660

Ω

Dynamic characteristics

Qg(tot)

total gate charge

ID = 1 A; VDD =10V; VGS = 4.5 V;

Figure 13

0.89

Qgs

gate-source charge

0.13

Qgd

gate-drain (Miller) charge

0.18

Ciss

input capacitance

VGS =0V; VDS = 20 V; f = 1 MHz;

Figure 11

-45

Coss

output capacitance

Crss

reverse transfer capacitance

td(on)

turn-on delay time

VDD =10V; RL =10 Ω;

VGS = 4.5 V; RG =6 Ω

4.5

rise time

-10

td(off)

turn-off delay time

18.5

fall time

-5

-ns

Source-drain diode

VSD

source-drain (diode forward) voltage IS = 0.3 A; VGS =0V; Figure 12

0.83

1.2

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