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S29GL01GS Datasheet(PDF) 1 Page - Cypress Semiconductor |
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S29GL01GS Datasheet(HTML) 1 Page - Cypress Semiconductor |
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1 / 108 page  Cypress Semiconductor Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-98285 Rev. *O Revised September 21, 2017 S29GL01GS/S29GL512S S29GL256S/S29GL128S 1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/ 256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte), 3.0 V, GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption. Distinctive Characteristics CMOS 3.0 Volt Core with Versatile I/O 65 nm MirrorBit Eclipse Technology Single supply (VCC) for read / program / erase (2.7V to 3.6V) Versatile I/O Feature – Wide I/O voltage range (VIO): 1.65V to VCC x16 data bus Asynchronous 32-byte Page read 512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes Single word and multiple program on same word options Automatic Error Checking and Correction (ECC) – internal hardware ECC with single bit error correction Sector Erase – Uniform 128-kbyte sectors Suspend and Resume commands for Program and Erase operations Status Register, Data Polling, and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP) – Volatile and non-volatile protection methods for each sector Separate 1024-byte One Time Program (OTP) array with two lockable regions Common Flash Interface (CFI) parameter table Temperature Range / Grade – Industrial (-40°C to +85°C) – Industrial Plus(-40°C to +105°C) – Automotive, AEC-Q100 Grade 3 (-40 °C to +85 °C) – Automotive, AEC-Q100 Grade 2 (-40 °C to +105 °C) 100,000 Program / Erase Cycles 20 Years Data Retention Packaging Options – 56-pin TSOP – 64-ball LAA Fortified BGA, 13 mm x 11 mm – 64-ball LAE Fortified BGA, 9 mm x 9 mm – 56-ball VBU Fortified BGA, 9 mm x 7 mm |
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