S29GL01GS datasheet(21/108 Pages) CYPRESS

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Document Number: 001-98285 Rev. *O

Page 21 of 108

S29GL01GS/S29GL512S

S29GL256S/S29GL128S

5.2

Program and Erase Summary

Flash data bits are erased in parallel in a large group called a sector. The Erase operation places each data bit in the sector in the

logical 1 state (High). Flash data bits may be individually programmed from the erased 1 state to the programmed logical 0 (low)

state. A data bit of 0 cannot be programmed back to a 1. A succeeding read shows that the data is still 0. Only erase operations can

convert a 0 to a 1. Programming the same word location more than once with different 0 bits will result in the logical AND of the

previous data and the new data being programmed.

The duration of program and erase operations is shown in Embedded Algorithm Performance Table on page 43.

Program and erase operations may be suspended.



An erase operation may be suspended to allow either programming or reading of another sector (not in the erase sector).

No other erase operation can be started during an erase suspend.



A program operation may be suspended to allow reading of another location (not in the Line being programmed).



No other program or erase operation may be started during a suspended program operation - program or erase commands

will be ignored during a suspended program operation.



After an intervening program operation or read access is complete the suspended erase or program operation may be

resumed. The resume can happen at any time after the suspend assuming the device is not in the process of executing

another command.



Program and Erase operations may be interrupted as often as necessary but in order for a program or erase operation to

progress to completion there must be some periods of time between resume and the next suspend commands greater than

or equal to tPRS or tERS in Embedded Algorithm Performance Table on page 43.



When an Embedded Algorithm (EA) is complete, the EAC returns to the operation state and address space from which the

EA was started (Erase Suspend or EAC Standby).

The system can determine the status of a program or erase operation by reading the Status Register or using Data Polling Status.

Refer to Status Register on page 34 for information on these status bits. Refer to Data Polling Status on page 35 for more

information.

Any commands written to the device during the Embedded Program Algorithm are ignored except the Program Suspend, and Status

Read command.

Any commands written to the device during the Embedded Erase Algorithm are ignored except Erase Suspend and Status Read

command.

A hardware reset immediately terminates any in progress program / erase operation and returns to read mode after tRPH time. The

terminated operation should be reinitiated once the device has returned to the idle state, to ensure data integrity.

For performance and reliability reasons reading and programming is internally done on full 32-byte Pages.

ICC3 in DC Characteristics on page 72 represents the active current specification for a write (Embedded Algorithm) operation.

5.2.1

Program Granularity

The S29GL-S supports two methods of programming, Word or Write Buffer Programming. Each Page can be programmed by either

method. Pages programmed by different methods may be mixed within a Line for the Industrial Temperature version (-40°C to

+85°C). For the In-Cabin version (-40°C to +105°C) the device will only support one programming operation on each 32-byte page

between erase operations and Single Word Programming command is not supported.

Word programming examines the data word supplied by the command and programs 0’s in the addressed memory array word to

match the 0’s in the command data word.

Write Buffer Programming examines the write buffer and programs 0’s in the addressed memory array Pages to match the 0’s in the

write buffer. The write buffer does not need to be completely filled with data. It is allowed to program as little as a single bit, several

bits, a single word, a few words, a Page, multiple Pages, or the entire buffer as one programming operation. Use of the write buffer

method reduces host system overhead in writing program commands and reduces memory device internal overhead in

programming operations to make Write Buffer Programming more efficient and thus faster than programming individual words with

the Word Programming command.

S29GL01GS Datasheet(PDF) 21 Page - Cypress Semiconductor

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