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LTC4212CMS Datasheet(PDF) 16 Page - Linear Technology |
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LTC4212CMS Datasheet(HTML) 16 Page - Linear Technology |
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16 / 24 page ![]() 16 LTC4212 4212f 150mV, SLOW COMP trips the ECB (Time Point 10). If the voltage across RSENSE jumps above 150mV for 500ns or more, FAST COMP will trip the ECB. When the ECB trips, the GATE pin is driven to GND immediately to shut off the external N-channel FET and disconnect the board from the backplane supply. The FAULT pin is latched to a low state and the power good circuit is reset. The PGT and PGF pins are shorted to ground by internal N-channel FETs. In order to reset the fault latch, the ON pin must be taken low for more than 120 µs (Time Points 12 to 14). After that, taking the ON pin high (Time Point 15) starts a new power-up sequence. Autoretry Sequence Once the circuit breaker trips, the LTC4212 can be config- ured to autoretry that is attempt to reconnect the backplane supply automatically. Both FAULT and ON pins are tied together to an external pull-up resistor to VCC (RAUTO) and to a delay capacitor (CAUTO) as shown in Figure 5. Figure 6 shows two autoretry sequences caused by a persistent short. When the circuit breaker trips (Time Point 9), an internal N-channel FET at the FAULT pin is turned on to pull the pin low. This discharges the autoretry capacitor, CAUTO towards ground. When the ON pin volt- age drops below 0.455V for 10 µs (from Time Point 10), internal logic is reset and a 200 µA current source is connected to the GATE pin. The GATE pin is already pulled down to ground at Time Point 9. The circuit breaker is not reset so that the FAULT pin continues to discharge CAUTO. After the ON pin has dropped below 0.455V for more than 120 µs (Time Point 11), the circuit breaker is reset. The N-channel FET at the FAULT pin is switched off and the pull-up resistor at the ON pin starts to charge CAUTO towards the upper 1.316V threshold of the ON pin. Once the ON pin voltage rises above 1.316V, the first timing cycle is started. The total cooling off period for the external N-channel FET starts at Time Point 9 when the circuit breaker trips to Time Point 15 when the second timing cycle is started. OPERATIO Electronic Circuit Breaker (ECB) Reset Sequence The ECB reset sequence is shown in Figure 2 from Time Points 17 through 19. At Time Point 17, the ON pin is taken low. Ten microseconds later at Time Point 18, the internal logic is reset and a 200 µA source is connected to the GATE pin to pull the pin to ground. 120 µs after ON goes low (Time Point 19), the ECB is reset. When the ON pin is taken high at Time Point 20 a new first timing cycle is started. If the time from Time Point 17 to Time Point 18 is less than 120 µs, the ECB is not reset and taking the ON pin high at Time Point 20 will not start a new first timing cycle. Power Good Timeout Fault Sequence Figure 3 shows a power-up sequence in which the DC/DC converters do not enter regulation on time and the power good trips the ECB. The sequence is the same as for the normal power-up in Figure 2 until Time Point 12 when the power good timer times out and the PGI pin is sampled. Since PGI is low, the power good circuit trips the ECB. The GATE pin is pulled to ground immediately to disconnect power to the board and the FAULT pin is latched to a low state. The PGT and PGF pins are pulled to GND internally by N-channel FETs. To reconnect the board to the backplane supply, the ON pin must be taken low for at least 120 µs to reset the ECB and then high again to start a new first timing cycle. Overcurrent Fault Sequence Figure 4 shows a power-up sequence with SLOW COMP tripping the ECB. At the beginning of the second timing cycle (Time Point 6), the GATE pin is connected to the soft- start circuit and FAST COMP is armed but it does not usually trip the ECB due to the action of the soft-start circuit on the GATE pin. The soft-start circuit regulates the voltage across the RSENSE resistor to 50mV. At Time Point 8, the soft-start circuit is disconnected. A 10 µA current source pulls the GATE pin up and SLOW COMP is armed. If a short occurs and the voltage across RSENSE jumps above 50mV for more than 18 µs but is less than |
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