© 2017 Littelfuse, Inc.

Specifications are subject to change without notice.

Revised: 01/11/17

SESD Series Ultra Low Capacitance Diode Arrays

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause

permanent damage to the device. This is a stress only rating and operation of the device

at these or any other conditions above those indicated in the operational sections of this

specification is not implied.

Absolute Maximum Ratings

Thermal Information

Parameter

Rating

Units

Storage Temperature Range

-55 to 150

°C

Maximum Junction Temperature

150

°C

Maximum Lead Temperature

(Soldering 20-40s)

260

°C

Parameter

Test Conditions

Min

Typ

Max

Units

Input Capacitance

@ V

0.20

0.22

pF

Breakdown Voltage

V

9.00

V

Reverse Working Voltage

7.0

V

Reverse Leakage Current

I

25

50

nA

Clamping Voltage

V

9.20

V

Peak Pulse Current

t

2.0

A

ESD Withstand Voltage

IEC61000-4-2 (Contact)

±20

kV

IEC61000-4-2 (Air)

±20

Insertion Loss Diagram

1.E+06

1.E+07

1.E+08

1.E+10

Frequency (Hz)

1.E+09

-20.0

0

-10.0

-5.0

-15.0

-25.0

-30.0

Insertion Loss Diagram - 1103 DFN Array

1.E+06

1.E+07

1.E+08

1.E+10

Frequency (Hz)

1.E+09

-20.0

0

-10.0

-5.0

-15.0

-25.0

-30.0

Symbol

Parameter

Value

Units

I

PP

Peak Current (t

2.0

A

T

OP

Operating Temperature

-55 to 125

°C

T

STOR

Storage Temperature

-55 to 150

°C