SESD datasheet(3/8 Pages) LITTELFUSE

3 / 8 page

Specifications are subject to change without notice.

Revised: 01/11/17

TVS Diode Arrays (SPA®Diodes)

SESD Series Ultra Low Capacitance Diode Arrays

Device IV Curve

-2

-1

Voltage (V)

1.0

0.8

0.6

0.4

0.2

0.0

-0.2

-0.4

-0.6

-0.8

-1.0

910

Time

TS(max)

TS(min)

time to peak temperature

Preheat

Ramp-up

Ramp-down

Ramp-do

Critical Zone

TL to TP

Critical Zone

TL to TP

Reflow Condition

Pb – Free assembly

Pre Heat

- Temperature Min (T

s(min))

150°C

- Temperature Max (T

s(max))

200°C

- Time (min to max) (t

60 – 180 secs

Average ramp up rate (Liquidus) Temp (T

to peak

3°C/second max

S(max) to TL - Ramp-up Rate

3°C/second max

Reflow

- Temperature (T

L) (Liquidus)

217°C

- Temperature (t

60 – 150 seconds

Peak Temperature (T

260+0/-5 °C

Time within 5°C of actual peak

Temperature (t

20 – 40 seconds

Ramp-down Rate

6°C/second max

Time 25°C to peak Temperature (T

8 minutes Max.

Do not exceed

260°C

Soldering Parameters

Product Characteristics of 0402 DFN Package

Lead Plating

Pre-Plated Frame

Lead Material

Copper Alloy

Lead Coplanarity

0.0004 inches (0.102mm)

Substrate material

Silicon

Body Material

V-0 per UL 94 Molded Epoxy

Notes :

1. All dimensions are in millimeters

2. Dimensions include solder plating.

3. Dimensions are exclusive of mold flash & metal burr.

4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.

5. Package surface matte finish VDI 11-13.

USB3.0 Eye Diagram

Without SESD Device

With SESD Device

5.0 Gb/s, 1000mV differential, CPO Compliant Test Pattern

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