EN29F010 datasheet(21/35 Pages) EON

21 / 35 page

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

EN29F010

Rev. A, Issue Date: 2003/10/20

Table 7. DC Characteristics

(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 5.0V ± 10%)

Symbol

Parameter

Test Conditions

Min

Max

Unit

ILI

Input Leakage Current

≤ VIN ≤ Vcc

±5

µA

ILO

Output Leakage Current

≤ VOUT ≤ Vcc

±5

µA

ICC1

Supply Current (read) TTL Byte

CE = VIL; OE = VIH;

f = 6MHz

ICC2

Supply Current (Standby) TTL

CE = VIH

1.0

ICC3

Supply Current (Standby) CMOS

CE = Vcc ± 0.3V

5.0

µA

ICC4

Supply Current (Program or Erase)

Byte program, Sector or Chip

Erase in progress

VIL

Input Low Voltage

-0.5

0.8

VIH

Input High Voltage

Vcc +

0.5

VOL

Output Low Voltage

IOL = 2 mA

0.45

VOH

Output High Voltage TTL

IOH = -2.5 mA

2.4

Output High Voltage CMOS

IOH = -100 µA

Vcc -

0.4V

VID

A9 Voltage (Electronic Signature)

10.5

11.5

ILIT

A9 Current (Electronic Signature)

A9 = VID

100

µA

VLKO

Supply voltage (Erase and

Program lock-out)

3.2

4.2

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