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LP1110 Datasheet(PDF) 5 Page - Lowpower Semiconductor inc |
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LP1110 Datasheet(HTML) 5 Page - Lowpower Semiconductor inc |
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5 / 8 page  LP1110-00 Oct.-2017 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 5 of 8 Preliminary Datasheet LP1110 Electrical Characteristics (VCC = 12 V, TA =25°C, unless otherwise noted.) Characteristic Symbol Condition Min Typ Max Unit Supply Supply Voltage Range VCC − 4.6 − 13.2 V Supply Current ISYS BST = 12 V, IN = 0 V, EN=0V − 0.7 − mA EN Input Input Voltage High VEN_HI − 2.0 − − V Input Voltage Low VEN_LO − − − 0.8 V Hysteresis − − 300 − mV Input Current No internal pull-up or pull-down resistors −1.0 − +1.0 μA PWM Input Input Voltage High VPWM_HI − 2.0 − − V Input Voltage Low VPWM_LO − − − 0.8 V Hysteresis − − − 300 − mV Input Current − No internal pull-up or pull-down resistors −1.0 − +1.0 μA High-Side Driver Output Resistance, Sourcing Current − BST − SWN = 12 V − 3.3 - Ω Output Resistance, Sinking Current − BST − SWN = 12 V − 0.5 - Ω Output Resistance, Unbiased − BST − SWN = 0 V − 15 - kΩ Transition Times trDRVH BST − SWN = 12 V, CLOAD = 3.0 nF (See Figure 2) − 30 - ns tfDRVH 12 - ns Propagation Delay Times tpdhDRVH BST − SWN = 12 V, CLOAD = 3.0 nF (See Figure 2) - 95 - ns tpdlDRVH BST − SWN = 12 V, CLOAD = 3.0 nF (See Figure 2) 15 - ns tpdlEN (See Figure 1) 30 - ns tpdhEN (See Figure 1) 35 - ns SW Pull-down Resistance − SWN to PGND − 15 − kΩ Low-Side Driver Output Resistance, Sourcing Current − − 3.3 - Ω Output Resistance, Sinking Current − − 0.5 − Ω Output Resistance, Unbiased − VCC = PGND − 15 − kΩ Transition Times trDRVL CLOAD = 3.0 nF, (See Figure 2) − 30 - ns tfDRVL 12 - ns Propagation Delay Times tpdhDRVL CLOAD = 3.0 nF, (See Figure 2) − 105 - ns tpdlDRVL - 15 - ns tpdlEN (See Figure 1) - 30 - ns tpdhEN (See Figure 1) - 35 - ns Timeout Delay − DRVH − SWN = 0 − 110 − ns Under Voltage Lockout UVLO Startup − − - 4.3 - V UVLO Shutdown − − - 4.0 - V Hysteresis − − - 0.3 - V |
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