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4

HMC441

v09.0917

GaAs pHEMT MMIC MEDIUM

POWER AMPLIFIER, 6 - 18 GHz

Absolute Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2)

+5.5 Vdc

Gate Bias Voltage (Vgg1,Vgg2)

-8 to 0 Vdc

RF Input Power (RFIN)(Vdd = +5Vdc)

+20 dBm

Channel Temperature

175 °C

Continuous Pdiss (T= 85 °C)

(derate 8.5 mW/°C above 85 °C)

0.76 W

Thermal Resistance

(channel to die bottom)

118 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

Vdd (V)

Idd (mA)

+4.5

88

+5.0

90

+5.5

92

+2.7

80

+3.0

82

+3.3

83

Typical Supply Current vs. Vdd

Note: Ampliier will operate over full voltage ranges shown above

Gain, Power & Output IP3

vs. Gate Voltage @ 12 GHz

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

0

5

10

15

20

25

30

35

0

30

60

90

120

150

180

210

-1

-0.9

-0.8

-0.7

-0.6

-0.5

-0.4

-0.3

-0.2

-0.1

0

Gain

P1dB

Psat

IP3

Idd

Vgg1, Vgg2 Gate Voltage (V)

Additive Phase Noise Vs Offset Frequency,

RF Frequency = 8 GHz,

RF Input Power = 5 dBm (P1dB)

-170

-160

-150

-140

-130

-120

-110

-100

-90

-80

-70

10

100

1K

10K

100K

1M

OFFSET FREQUENCY (Hz)