SFH-331 datasheet(3/17 Pages) OSRAM

3 / 17 page

Version 1.3

SFH 331

2015-12-14

Rise and fall times of Ie ( 10% and 90% of Ie max)

C = 100 mA, tp = 10 µs, RL = 50 Ω)

(typ)

tr / tf

300 / 150

Capacitance

R = 0 V, f = 1 MHz)

(typ)

Forward voltage

(IF = 10 mA)

(typ (max)) V

2 (≤ 2.6)

Reverse current

(VR = 5 V)

(typ (max)) IR

0.01 (≤ 10)

µA

Luminous intensity

F = 10 mA)

(min)

6 (4 ... 12.5)

mcd

Phototransistor

(TA = 25 °C, λ = 950 nm)

Wavelength of max. sensitivity

(typ)

λS max

990

Spectral range of sensitivity

(S = 10% of Smax)

(typ)

440 ... 1150

Radiant sensitive area

(∅ = 240 µm)

(typ)

0.038

mm2

Dimensions of chip area

(typ)

L x W

(typ) 0.45 x

0.45

mm x

Half angle

(typ)

± 60

Capacitance

(VCE = 0 V, f = 1 MHz, E = 0)

(typ)

CCE

Dark current

(VCE = 20 V, E = 0)

(typ (max)) ICE0

1 (≤ 50)

Photocurrent

(λ = 950 nm, E

e = 0.1 mW/cm

2, V

CE = 5 V)

IPCE

≥ 16

µA

Rise and fall time

C = 1 mA, VCE = 5 V, RL = 1 kΩ)

(typ)

r, tf

µs

Collector-emitter saturation voltage

(IC = 5 µA, Ee = 0.1 mW/cm

(typ)

VCEsat

150

Parameter

Symbol

Values

Unit

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