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MP5016H Datasheet(PDF) 12 Page - Monolithic Power Systems |
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MP5016H Datasheet(HTML) 12 Page - Monolithic Power Systems |
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12 / 17 page ![]() MP5016H – 2.7 - 22V, 0.7 - 5A, PROGRAMMABLE, CURRENT-LIMITED SWITCH MP5016H Rev.1.0 www.MonolithicPower.com 12 5/25/2017 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. Short-Circuit Protection (SCP) If the load current increases rapidly due to a short-circuit event, the current may exceed the current-limit threshold before the control loop can respond. If the current reaches the 8A secondary current limit level, a fast turn-off circuit activates to turn off the power MOSFET. This can help limit the peak current through the switch, keeping the input voltage from dropping too much. The total short-circuit response time is about 1µs. After the MOSFET has switched off, the part restarts. During the restart process, if the short still exists, the MP5016H regulates the gate voltage to hold the current at a normal current limit level. The IC enters hiccup mode with 2ms of on time and 700ms of off time. To prevent safe operating area (SOA) damage during a high input voltage short-circuit protection (SCP) condition, the IC current limit folds back when the power MOSFET VDS voltage is above the typical 11V and the junction temperature is over 110°C. To avoid large input voltage spikes from damaging the IC during SCP entry, it is recommended to use a 22 μF minimum input capacitor when VIN is higher than 15V. If the input surge voltage is higher than the 26V absolute voltage, the IC may be damaged. Reverse-Blocking MOSFET Driver The MP5016H has a GATE pin to provide an external N-channel MOSFET gate drive signal for reverse-current protection (RCP). Three events can pull down the GATE voltage: VIN below the under-voltage lockout (UVLO), the enable (EN) voltage below the low level threshold, or thermal shutdown. If any of these conditions occur, GATE sinks the current from the gate of the external MOSFET to initiate a fast turn-off. For 3.3V low input voltage applications, choose an external reverse-blocking MOSFET with a small gate threshold voltage (VGSth < 1.6V) to reduce the voltage drop caused by the reverse- blocking MOSFET. Setting an appropriate OVP threshold can also protect the reverse voltage (from the output to the input) when using an external N-channel MOSFET. When VOUT rises too high during normal operation, the MP5016H SOURCE voltage is higher than the OVP threshold. In this case, the GATE voltage is regulated to maintain the SOURCE clamped at the OVP threshold. This action protects the reverse current from the high VOUT to the low VIN. A 100pF capacitor is required on GATE if it is not connected to the external MOSFET. Output Discharge The MP5016H involves a discharge function that provides a resistive discharge path for the external output capacitor. The function is active when the part is disabled (VIN UVLO, EN shutdown) and is done in a very limited amount of time. When using the external reverse- current block MOSFET, the output discharge path is blocked by the reverse current block MOSFET. Therefore, the output cannot be discharged when the reverse-current block MOSFET is used. Enable (EN) The MP5016H is enabled when EN is high. The MP5016H is disabled when EN is low. Floating EN shuts down the MP5016H because there is an internal 2.2 MΩ resistor pulling EN down to ground. For automatic start-up, connect a pull- up resistor from VCC to EN. EN is clamped internally using a 5.5V Zener diode (see Figure 2). Connecting the EN input through a pull-up resistor to VCC limits the EN input current below 100μA to prevent damage to the Zener diode. For example, when connecting a 300k Ω pull-up resistor to 22V VCC, IZener = (22V - 5.5V) / 300kΩ - 5.5V / 2.2MΩ = 53µA. EN Logic 2.2MΩ EN GND 1kΩ 5.5V Figure 2: Zener Diode between EN and GND When using a pull-up resistor to set the power- on threshold, avoid using a pull-up resistor that is too small to increase the operational quiescent current. |
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