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LTC4211 Datasheet(PDF) 16 Page - Linear Technology |
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LTC4211 Datasheet(HTML) 16 Page - Linear Technology |
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16 / 22 page ![]() LTC4235 16 4235f For more information www.linear.com/LTC4235 applicaTions inForMaTion REG Pin Bypassing The LTC4235 has an internally regulated supply near SENSE+ for internal bias of the current sense amplifier. It is not intended for use as a supply or bias pin for external circuitry. A 0.1µF capacitor should be connected between theREGandSENSE+pins.Thiscapacitorshouldbelocated very near to the device and close to the REG pin for the best performance. REG and IMON Start-Up The start-up current of the current sense amplifier when the LTC4235 is powered on consists of two parts: the first is the current necessary to charge the REG bypass capacitor,whichisnominally0.1µF.SincetheREGvoltage charges to approximately 4.1V below the SENSE+ voltage, this can require a significant amount of start-up current. The second source is the output current that flows into ROUT, which upon start-up may temporarily drive the IMON output high for less than 2ms. This is a temporary conditionwhichwillceasewhenthesenseamplifiersettles into normal closed-loop operation. CPO and DGATE Start-Up The CPO and DGATE pin voltages are initially pulled up to a diode below the IN pin when first powered up. CPO starts ramping up 7µs after INTVCC clears its undervolt- age lockout level. Another 40µs later, DGATE also starts ramping up with CPO. The CPO ramp rate is determined by the CPO pull-up current into the combined CPO and DGATE pin capacitances. An internal clamp limits the CPO pin voltage to 12V above the IN pin, while the final DGATE pin voltage is determined by the gate drive amplifier. An internal 12V clamp limits the DGATE pin voltage above IN. CPO Capacitor Selection The recommended value of the capacitor between the CPO and IN pins is approximately 10× the input capacitance CISS of the ideal diode MOSFET. A larger capacitor takes a correspondingly longer time to charge up by the internal charge pump. A smaller capacitor suffers more voltage drop during a fast gate turn-on event as it shares charge with the MOSFET gate capacitance. MOSFET Selection The LTC4235 drives N-channel MOSFETs to conduct the load current. The important features of the MOSFETs are on-resistanceRDS(ON),themaximumdrain-sourcevoltage BVDSS and the threshold voltage. The gate drive for the ideal diode and Hot Swap MOSFET is guaranteed to be greater than 10V and is limited to 14V. An external Zener diode can be used to clamp the potential from the MOSFET’s gate to source if the rated breakdown voltage is less than 14V. The maximum allowable drain-source voltage BVDSS must be higher than the supply voltage including supply transients as the full supply voltage can appear across the MOSFET. If an input or output is connected to ground, the full supply voltage will appear across the MOSFET. The RDS(ON) should be small enough to conduct the maximum load current, and also stay within the MOSFET’s power rating. Supply Transient Protection When the capacitances at the input and output are very small, rapid changes in current during input or output short-circuit events can cause transients that exceed the 24V absolute maximum ratings of the IN and OUT pins. To minimize such spikes, use wider traces or heavier trace plating to reduce the power trace inductance. Also, bypass locally with a 10µF electrolytic and 0.1µF ceramic, or alternatively clamp the input with a transient voltage suppressor (Z1, Z2). A 100Ω, 0.1µF snubber damps the response and eliminates ringing (See Figure 10). Design Example As a design example for selecting components, consider a 12V system with a 7A maximum load current for the two supplies (see Figure 1). First, select the appropriate value of the current sense resistor RSforthe12Vsupply.Calculatethesenseresistor value based on the maximum load current ILOAD(MAX) and |
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