11

HMC998A

v02.0218

GaAs pHEMT MMIC

2 WATT POWER AMPLIFIER, DC - 22 GHz

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

Absolute Maximum Ratings

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Outline Drawing

NOTES:

1. ALL DIMENSIONS IN INCHES [MILLIMETERS]

2. DIE THICKNESS IS 0.004 (0.100)

3. TYPICAL BOND PAD IS 0.0031 (0.079) SQUARE

4. RF PADS ARE 0.0039 (0.098) X 0.0076 (0.193)

5. BOND PAD METALIZATION: GOLD

6. BACKSIDE METALLIZATION: GOLD

7. BACKSIDE METAL IS GROUND

8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS

9. OVERALL DIE SIZE IS ±.002

Standard

Alternate

GP-1 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section on our

website for die packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

Drain Bias Voltage (Vdd)

16V

Gate Bias Voltage (Vgg1)

-3 to 0 Vdc

RF Input Power (RFIN)

27 dBm

Output Load VSWR

7:1

Continuous Pdiss (T= 85 °C)

(derate 113.6 mW/°C above 85 °C)

8.8W

Storage Temperature

-65 to 150 °C

Operating Temperature

-55 to 85 °C

ESD Sensitivity (HBM)

Passed 250V Class1A

Channel Temperature

175 °C

Nominal Channel Temperature

(T=85 °C, Vdd = 15V)

161.5 °C

Thermal Resistance

(channel to die bottom)

10.2 °C/W

Reliability Information

Stresses at or above those listed in the Absolute Maximum

Ratings may cause permanent damage to the product. This

is a stress rating only, functional operation of the product

at these or any other conditions above those indicated in

the operational section of this specification is not implied.

Operation beyond the maximum operating condition for

extended periods may affect product reliability.