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BD62012FS Datasheet(PDF) 18 Page - Rohm |
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BD62012FS Datasheet(HTML) 18 Page - Rohm |
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18 / 23 page ![]() 18/20 Datasheet Datasheet BD62012FS TSZ02201-0828ABB00020-1-2 © 2013 ROHM Co., Ltd. All rights reserved. 15.MAR.2013 Rev.003 http://www.rohm.com TSZ22111 · 15 · 001 Notes for Use 1) Absolute maximum ratings Devices may be destroyed when supply voltage or operating temperature exceeds the absolute maximum rating. Because the cause of this damage cannot be identified as, for example, a short circuit or an open circuit, it is important to consider circuit protection measures, such as adding fuses, if any value in excess of absolute maximum ratings is to be implemented. 2) Electrical potential at GND Keep the GND terminal to the minimum potential under any operating condition. In addition, check to determine whether there is any terminal that provides voltage below GND, including the voltage during transient phenomena. However, note that even if the voltage does not fall below GND in any other operating condition, it can still swing below GND potential when the motor generates back electromotive force at the RCL terminal. The chip layout in this product is designed to avoid this sort of electrical potential problem, but pulling excessive current may still result in malfunctions. Therefore, it is necessary to observe operation closely to conclusively confirm that there is no problem in actual operation. If there are small signal GND and high current GND, it is recommended to separate the patterns for the high current GND and the small signal GND and provide a proper grounding to the reference point of the set not to affect the voltage at the small signal GND with the change in voltage due to resistance component of pattern wiring and high current. Also for GND wiring pattern of the component externally connected, pay special attention not to cause undesirable change to it. 3) Driver outputs The high voltage semiconductor generally driven by this product is connected to the next stage via the controller. If any special mode in excess of absolute maximum ratings is to be implemented with this product or its application circuits, it is important to take physical safety measures, such as providing voltage-clamping diodes or fuses. 4) Thermal design Use a thermal design that allows sufficient margin in light of the power dissipation (Pd) in actual operating conditions. 5) Inter-pin shorts and mounting errors Take caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or if pins are shorted together. Also, connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting the power supply lines, such as establishing an external diode between the power supply and the IC power supply pin. 6) Operation in strong electromagnetic fields Using this product in strong electromagnetic fields may cause IC malfunctions. Take extreme caution with electromagnetic fields. 7) Testing on application boards When testing the IC on an application board, connecting a capacitor to a low impedance pin subjects the IC to stress. Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic measure. Use similar precaution when transporting or storing the IC. 8) Regarding the input pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements, in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, as well as operating malfunctions and physical damage. Therefore, do not use methods by which parasitic diodes operate, such as applying a voltage lower than the GND (P substrate) voltage to an input pin. Resistor Transistor (NPN) N N N P + P + P P substrate GND Parasitic element Pin A N N P + P + P P substrate GND Parasitic element Pin B C B E N GND Pin A Pin B Other adjacent elements E B C GND Parasitic element Appendix: Example of monolithic IC structure Parasitic element |
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