2002 May 17

2

Philips Semiconductors

Preliminary specification

SiGe MMIC amplifier

BGU2003

FEATURES

• Low current

• Very high power gain

• Low noise figure

• Integrated temperature compensated biasing

• Control pin for adjustment bias current

• Supply and RF output pin combined.

APPLICATIONS

• RF front end

• Wideband applications, e.g. analog and digital cellular

telephones, cordless telephones (PHS, DECT, etc.)

• Low noise amplifiers

• Satellite television tuners (SATV)

• High frequency oscillators.

DESCRIPTION

Silicon MMIC amplifier consisting of an NPN double

polysilicon transistor with integrated biasing for low voltage

applications in a plastic, 4-pin SOT343R package.

PINNING

PIN

DESCRIPTION

1GND

2RF in

3

CTRL (bias current control)

handbook, halfpage

Top view

MAM427

21

4

3

BIAS

CIRCUIT

CTRL

RFin

GND

VS+RFout

Marking code: A6

Fig.1 Simplified outline (SOT343R) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

DC supply voltage

RF input AC coupled

−

4.5

V

DC supply current

RF input AC coupled

10

−

mA

MSG

maximum stable gain

18

−

dB

NF

noise figure

1.1

−

dB