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MMRF1008HS Datasheet(PDF) 3 Page - NXP Semiconductors |
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MMRF1008HS Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 19 page ![]() MMRF1008H MMRF1008HS MMRF1008GH 3 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 275 W Peak (27.5 W Avg.), f = 1030 MHz, Pulse, 128 sec Pulse Width, 10% Duty Cycle Power Gain Gps 19 20.3 22 dB Drain Efficiency D 63 65.5 — % Input Return Loss IRL — --14 --9 dB Typical Broadband Performance — 960--1215 MHz (In Freescale 960--1215 MHz Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 960--1215 MHz, Pulse, 128 sec Pulse Width, 10% Duty Cycle Power Gain Gps — 19.8 — dB Drain Efficiency D — 58 — % Table 5. Ordering Information Device Tape and Reel Information Package MMRF1008HR5 R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel NI--780H--2L MMRF1008HSR5 NI--780S--2L MMRF1008GHR5 NI--780GH--2L 1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GH) parts. |
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