MMRF1008HS datasheet(6/19 Pages) NXP

6 / 19 page

RF Device Data

Freescale Semiconductor, Inc.

MMRF1008H MMRF1008HS MMRF1008GH

TYPICAL CHARACTERISTICS

0.1

1000

020

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 4. Capacitance versus Drain--Source Voltage

Ciss

Coss

Crss

Measured with 30 mV(rms)ac @ 1 MHz

VGS =0 Vdc

100

160

VDD =50 Vdc,IDQ = 100 mA

f = 1030 MHz, Pulse Width = 128 sec

100

DUTY CYCLE (%)

Figure 5. Safe Operating Area

140

120

520

Pout = 275 W

Pout = 200 W

Pout = 250 W

100

Pout, OUTPUT POWER (WATTS) PEAK

Figure 6. Power Gain and Drain Efficiency

versus Output Power

D

400

Gps

VDD =50 Vdc,IDQ = 100 mA, f = 1030 MHz

Pulse Width = 128 sec, Duty Cycle = 10%

Pin, INPUT POWER (dBm) PEAK

Figure 7. Output Power versus Input Power

P3dB = 55.29 dBm (338 W)

Actual

Ideal

P1dB = 54.76 dBm (299 W)

VDD =50 Vdc,IDQ = 100 mA, f = 1030 MHz

Pulse Width = 128 sec, Duty Cycle = 10%

Pout, OUTPUT POWER (WATTS) PEAK

Figure 8. Power Gain versus Output Power

100

IDQ = 400 mA

400

300 mA

200 mA

100 mA

VDD = 50 Vdc, f = 1030 MHz

Pulse Width = 128 sec, Duty Cycle = 10%

Figure 9. Power Gain versus Output Power

Pout, OUTPUT POWER (WATTS) PEAK

VDD =30 V

35 V

45 V

100

400

50 V

40 V

IDQ = 100 mA, f = 1030 MHz

Pulse Width = 128 sec

Duty Cycle = 10%

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