MMRF1008H MMRF1008HS MMRF1008GH

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

RF power transistors designed for applications operating at frequencies

from 900 to 1215 MHz. These devices are suitable for use in defense and

commercial pulse applications, such as IFF and DME.

Duty Cycle = 10%

Power Gain — 20.3 dB

Drain Efficiency — 65.5%

 Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power

250 W Peak (25 Watts Avg.), f = 960--1215 MHz, Pulse Width =

Power Gain — 19.8 dB

Drain Efficiency — 58%

Features

 Characterized with Series Equivalent Large--Signal Impedance Parameters

 Internally Matched for Ease of Use

 Integrated ESD Protection

 Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

960--1215 MHz, 275 W, 50 V

PULSE

LATERAL N--CHANNEL

RF POWER MOSFETs

MMRF1008H

MMRF1008HS

MMRF1008GH

Note: The backside of the package is the

source terminal for the transistor.

(Top View)

Drain

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Figure 1. Pin Connections

Gate

NI--780H--2L

MMRF1008H

NI--780S--2L

MMRF1008HS

NI--780GH--2L

MMRF1008GH

Document Number: MMRF1008H

Rev. 1, 5/2016

Freescale Semiconductor

Technical Data

 Freescale Semiconductor, Inc., 2013, 2016. All rights reserved.