TT410

Document number: DS39107 Rev. 4 - 2

2 of 5

www.diodes.com

March 2017

© Diodes Incorporated

TT410

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

1,000

V

RMS Reverse Voltage

700

V

Average Rectified Output Current

4.0

A

Non-Repetitive Peak Forward Surge Current, 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

120

A

Non-Repetitive Peak Forward Surge Current, 1.0ms

Single Half Sine-Wave Superimposed on Rated Load

240

A

I

2

t Rating for Fusing (1ms < t < 8.3ms)

I

2

t

59

A

2

S

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance, Junction to Ambient (Note 5)

(Per Element)

13

°C/W

Typical Thermal Resistance, Junction to Lead (Per Element)

8

°C/W

Typical Thermal Resistance, Junction to Case (Per Element)

3

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 6)

1,000

—

—

V

Forward Voltage (Per Element)

—

—

0.91

0.80

1.0

—

V

Leakage Current (Note 6) (Per Element)

—

—

0.15

55

5

500

μA

Total Capacitance (Per Element)

—

40

—

pF

Notes:

5. Device mounted on 15mmx12mmx1.6mm AL Pad attached on 100mmx75mmx27mm Fin heatsink. Thermal resistance test performed in accordance with

JESD-51.

6. Short duration pulse test used to minimize self-heating effect.