AFIC31025N datasheet(2/12 Pages) NXP

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RF Device Data

NXP Semiconductors

AFIC31025N AFIC31025GN

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

–0.5, +65

Vdc

Gate--Source Voltage

VGS

–0.5, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

–65 to +150

C

Case Operating Temperature Range

–40 to +150

C

Operating Junction Temperature Range (1)

–40 to +225

C

Input Power

dBm

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 81C, DC, Total PD = 29.3 W

Stage 1, 28 Vdc, PD =3.8 W

Stage 2, 28 Vdc, PD = 25.5 W

RJC

5.85

1.92

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Charge Device Model (per JESD22--C101)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

260

C

Table 5. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 -- Off Characteristics (3)

Zero Gate Voltage Drain Leakage Current

(VDS =65 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =32 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Gate--Source Leakage Current

(VGS =1.0 Vdc, VDS =0 Vdc)

IGSS

—

Adc

Stage 1 -- On Characteristics

Gate Threshold Voltage (3)

(VDS =10 Vdc, ID =2.5 Adc)

VGS(th)

0.8

1.2

1.6

Vdc

Gate Quiescent Voltage

(VDS =28 Vdc, IDQ1(A+B) =59 mAdc)

VGS(Q)

—

2.0

—

Vdc

Fixture Gate Quiescent Voltage

(VDD =28 Vdc, IDQ1(A+B) = 59 mAdc, Measured in Functional Test)

VGG(Q)

4.6

5.3

6.1

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

3. Each side of device measured separately.

(continued)

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