AFIC31025N datasheet(3/12 Pages) NXP

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AFIC31025N AFIC31025GN

RF Device Data

NXP Semiconductors

Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 2 -- Off Characteristics (1)

Zero Gate Voltage Drain Leakage Current

(VDS =65 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =32 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Gate--Source Leakage Current

(VGS =1.0 Vdc, VDS =0 Vdc)

IGSS

—

Adc

Stage 2 -- On Characteristics

Gate Threshold Voltage (1)

(VDS =10 Vdc, ID =16 Adc)

VGS(th)

0.8

1.2

1.6

Vdc

Gate Quiescent Voltage

(VDS =28 Vdc, IDQ2(A+B) = 157 mAdc)

VGS(Q)

—

1.9

—

Vdc

Fixture Gate Quiescent Voltage

(VDD =28 Vdc, IDQ2(A+B) = 157 mAdc, Measured in Functional Test)

VGG(Q)

4.3

5.0

5.8

Vdc

Drain--Source On--Voltage (1)

(VGS =10 Vdc, ID = 200 mAdc)

VDS(on)

0.1

0.22

1.5

Vdc

1. Each side of device measured separately.

(continued)

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