MMRF2006NT1

1

RF Device Data

Freescale Semiconductor, Inc.

RF LDMOS Wideband Integrated

Power Amplifier

The MMRF2006N wideband integrated circuit is designed with on--chip

matching that makes it usable from 1805 to 2170 MHz. This multi--stage

structure is rated for 26 to 32 V operation and can be used in many RF

amplifier modulation formats.

Driver Application — 2100 MHz

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on

CCDF.

Frequency

(dB)

PAE

(%)

Output PAR

(dB)

ACPR

(dBc)

2110 MHz

32.6

16.8

7.7

--51.3

2140 MHz

32.6

17.0

7.6

--51.4

2170 MHz

32.4

17.0

7.5

--51.6

≃ 20 W CW

Driver Application — 1800 MHz

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB

@ 0.01% Probability on CCDF.

Frequency

(dB)

PAE

(%)

Output PAR

(dB)

ACPR

(dBc)

1805 MHz

31.8

17.4

7.6

--51.2

1840 MHz

31.8

17.4

7.7

--50.2

1880 MHz

31.8

17.4

7.7

--51.0

Features

 Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters

 On--Chip Matching (50 Ohm Input, DC Blocked)

 Integrated ESD Protection

 In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 13--inch Reel.

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

1

Quiescent Current

2

3

4

5

6 7 8 9 10 11 12

18

17

16

15

14

13

24 23 22 21 20 19

GND

GND

NC

NC

NC

NC

NC

NC

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.

1805--2170 MHz, 20 W CW, 28 V

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIER

MMRF2006NT1

PQFN 8

 8

PLASTIC

Document Number: MMRF2006N

Rev. 0, 7/2014

Freescale Semiconductor

Technical Data

 Freescale Semiconductor, Inc., 2014. All rights reserved.